化学 高校生 約4年前

なぜ答えがbなのか詳しく教えていただきたいです🙇🏻‍♀️ (問題文と選択肢の意味はわかります。)

9. A mixture of 0.50 mol H。(6) and 0.50 mol N。(q) is introduced into a 15.0 liter container having a pinhdle leak at 30°C. After a period of time, which of the following is true? The partial pressure of H, exceeds that of N, in the container. b) The partial pressure of N, exceeds that of H, in the container. C. The partial pressures of the two gases remain equal. d. The partial pressures of both gases increase above their initial values.

化学 高校生 約4年前

なぜ答えがbなのか分かりやすく説明して頂きたいです🙇🏻‍♀️

9. Amixture of 0.50 mol H。(G) and 0.50 mol N,(g) is introduced into a 15.0 liter container having a pinhdle leak at 30℃. After a period of time, which of the following is true? a. The partial pressure of H, exceeds that of N, in the container. b) The partial pressure of N, exceeds that of H, in the container. C. The partial pressures of the two gases remain equal. d. The partial pressures of both gases increase above their initial values.

化学 高校生 約5年前

RHEED法の原理と得られる7つの情報が、この英文に書かれているみたいなのですが、よく分かりません。 分かる方助けてください！🙇‍♂️

INTRODUCTION Reection high-energy electron diHiraction (RHEED) uses a Rnely collimated electron beam with energy of 10-100 keV. The beam irradiates a sample surface with gazing incidence to obtain forward scattered difraction patterms. RHEED enables us to analyze structures of crystal surfaces at atomic levels and also to in situ monitor growth processes of thin films (mo、1988: Ichimiya and Cohen、2004: Peng et al.. 2011). From the arrangement。intensity and profile of the dilraction spots in RHEED patterns as described below in detail、 one can obtain various kinds of information: (1) the periodicity (unit cells) in atomic arrangements. (2) flat- ness of surfaces. (3) sizes of grains/domains of surface structures and microcrystals grown on the surface. (3) epitaxial relation between the grown flms/islands with respect to the substrate. (5) parameters character- izing structural phase transitions. (6) individual atomic positions in the unit cells. and (7) growth styles of thin films and numbers of atomic layers grown. The most important advantages of the method are that it is quite easy to install the RHEED apparatus in Yarious types of vacuum chambers without interfering with other components of apparatuses and to do real- time monitoring during thin-Rlm growths. Because of these advantages.RHEED is nowwidelyusednotonlyin research Iabs of surfaces and thin fims. but also in device production processes in industry Low-energy electron diiraction (LEED、see article Low-ENNERcy ErecroN DirscmoN)。 in which an electron beam of 10-100 eV in energy is irradiated onto a sample surface with nearly normal incidence to obtain back- scattered difraction patterns. is also widely used to analyze the atomic structures of crystal surfaces. Since one has to make the sample face directly to the LEED